Microelectronics and MEMS Lab of Department of Electrical Engineering IIT Madras is well-equipped for semiconductor device and MEMS fabrication, characterization, modelling and simulation. The EE dept offers MS and PhD degrees in the various areas.

The laboratory has very close interaction with Indian industry such as BEL, Bangalore and has carried out several sponsored research projects for DRDO, ISRO and DST. Many of the processes developed in this laboratory were transferred to industry for commercialization.

Research and Development: Focus Areas

High Speed Electronic and Optoelectronic Devices
• GaN, GaAs & InP based BJTs, MOSFETs, HEMTs, LEDs & Photodetectors
• Silicon Photonics: New Devices for Sensor & Communication Systems

Micro Electro Mechanical Systems (MEMS) & Bio-sensors
• Optical MEMS (Variable Optical Attenuators, Micromirrors)
• Sensors (Pressure Sensors and Accelerometers)
• Actuators (Micropumps and microvalves)
• Extraction of parameters (Young’s modulus, residual stress, stiction force)
• BioMEMS (Triglyceride and urea sensors)
• RF MEMS (RF switches and resonators)
• Microfluidics (Conventional and Digital)

Modelling of Semiconductor Devices
• Power and high frequency Semiconductor devices (AlGaN/GaN HEMTs with field plates, Superjunction devices, Power MOSFETs, Spreading resistance modelling)
• 3-Dimensional modelling for small goemetry devices (SOI MOSFETs, FinFETs)
• Quantum mechanical modelling – self-consistent solution of Poisson and Schrodinger equations (Resonant Tunneling Diodes, Short Channel MOSFETs)
• Modelling of Heterostructure devices (HEMTs, Si/SiGe MOSFETs)
• Compact Modelling (SiGe/SiGe:C HBTs, LD-MOSFETs, CNFETs)

Other Research
• Polycrystalline, porous and amorphous silicon (Carrier transport in polycrystalline and amorphous silicon thin films, Passivation techniques, Thin film transistors, Sensors)
• Silicon On Insulator (SOI) MOSFETs and ICs (Technology development, New device concepts)
• Ultra-thin gate dielectrics for MOSFETs (High-k gate dielectrics, Ultra-thin (<2 nm) SiO2 growth and characterization)