Every year ONGC invites application from fresher young engineers for the post of Graduate Trainees. Here I’m giving you basic syllabus of ONGC.

Selection process:

Written Test- 150 marks-3 hours duration
The written test will consists of Three sections
Technical
General Awareness
Aptitude

Time Duration: 3 Hours
No Negative marking
Objective type
Written Qualifying marks: 60%(Gen and OBC) and 40%(SC/ST/PWD)

Interview-15% weightage- read all technical subjects and also read newspapers for latest events.

Syllabus:

Technical Section 80 questions): The technical syllabus is similar to UPSC standard IES(Indian engineering service exam) syllabus.Click here to see the syllabus
Mostly they will ask from Analog circuits,Electronic device and circuits, Communications, EMTL, Network theory,Antennas,Microprocessor, Digital electronics, Instrumentation,control systems, signals and systems-Baics like laplace transforms, z-transforms,fourier transforms. They will ask basic theory question and less problematic questions.

General awareness(40 questions): Current affairs,General knowledge, Geography, Indian polity, Indian history,Physical science-Read Hindu news papers and GK books,NCERT books from 8th to 12th class.

Aptitude(30 Questions): Comprehensive passage, Verbal and nonverbal,Quantitative aptitude, Reasoning- read R.S.Agarwal book for Both quantitative and reasoning.

ONGC EC syllabus:


1. A differential amplifier amplifies the ---------- between two input signals.
a) addition
b) subtraction
c) multiplication
2. The differential amplifier can amplify ac as well as dc signals
because it
employs ----------.
a)
b)
3. Noise of input signal in differential amplifier
a) increases
b) decreases
c) remains the soul
4. Cascaded differential amplifier requires level translator because of
a) impedance matching
b) isolating each stage
c) d.c.shift.
5. In case of constant current bias ,R1 is replaced by diodes D1 & D2 TO
a) increase the input impedance
b) improve thermal stability
c) increase gain
6. If CMRR is high ,the wide variation of input within the tolerable limits of the
equipment makes output
a) high
b) low
c) the same

7. A binary half adder
a). Adds two binary digits and produces their sum and carry
b). Adds half the sum to the carry
c). Adds two binary digits and carry from previous addition
d). Adds two binary digits at half the speed

8. An index register in a computer is for
a. Arithmetic and logic functions
b. Storage of results
c. Modifying the address
d. Counting the no of programmes

9. An example of volatile memory is
a. RAM b. ROM c. EPROM d. Magnetic tape

10. Barrier voltage in a P-N junction is caused by
a. Thermally generated electrons and holes
b. Diffusion of majority carriers across the junction
c. Migration of minority carriers across the junction
d. Flow of drift current

11. The temperature coefficient of an intrinsic semiconductor is
a. Positive b. Negative c. Zero d. Like metals

12. A silicon transistor has a leakage current 1cbo = 1 ma. If the temp. rises by 50o C the leakage current will be
a. 30 ma b. 32ma c. 50ma d. no change

12. The noise figure of an ideal amplifier in decibel is
a. 0.5 b. 0 c. 1 d. 10

13. The rise time of an amplifier is 200 nsec. Its bandwidth is
a. 70MHz b. 140MHz c. 100MHz d. 1.75Mhz

14. MOSFET operates in
a. Depletion mode only
b. Enhancement mode only
c. Depletion and enhancement mode
d. None of these of the above

15. A device which behaves like SCRs is
a. UJT b. Triac c. MOSFET d. SRD

16. A plate modulated class C RF amplifier produces 100 KW of radiated power at 100 % modulation. The modulating audio amplifier supplies approximately

a. 25KW b. 33KW c. 50KW d. 66KW

17. A 100 MHz FM carrier, modulated by a 5 KHz sine wave deviates by 50 KHz. If the frequency of the modulating sine wave is doubled, the deviation will
a. Double b. Half c. Quadruple d. Have no change

18. Noise generated by a resistor is dependent on
a. Its Value
b. Its temperature
c. Both value and temp
d. None of these

19. A 32 channel 8 bit PCM system samples at 8 KHz rate. The overall bit rate in kilobits per second will be
a. 2048 b. 2000 c. 1920 d. 64

20. Rsistivity ofGermanium in ohms cm. is approx. equal to
a. 50 b. 10-12 c. 50k d. 10-6

21. The number of free electrons/cubic cm intrinsic Germanium at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 1000 d. 5*106

22. The number of free electrons/cubic cm of intrinsic silicon at room temperature is approx. equal to
a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106

23. The forbidden energy gap for silicon is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

24. The forbidden energy gap for Germanium is
a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV

25. N type material is formed by the addition of the following (penta valent )atom in n to semiconductor material
a. Antimony
b. Arsenic
c. Phosphorous
d. Any of the above

26. P type material is formed by the addition of the following [Trivalent] atom tn to semiconductor material
a. Boron b. Gallium c. Indium d. Any of the above

27. Impurity atoms that produces N type material by its addition in semiconductor is called
a. Donar b. Acceptor c. Conductor d. Insulator

28. Impurity atoms that produces P type material by its addition in semiconductor is called
a. Donar b. Acceptor c. Conductor d. Insulator

29. Dynamic resistance of a diode Rd is if voltage changes is DVd and the current change is D Id
a. D Vd / D Id
b. D Id / D Vd
c. 1 / DVd
d. 1 / D Id

30. Point contact diodes are preferred at very high frequency, because of its low junction
a. Capacitance and inductance
b. Inductance
c. Capacitance