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II/IV B.TECH.(CSE) I - SEMESTER

CSE 2.1.1 ELECTRONICS – I Credits:4


Instruction: 3 Periods & 1 Tut /week Sessional Marks: 30
Univ. Exam : 3 Hours Univ-Exam-Marks:70


I. Semiconductors :
Electronic Emission from metal carrier concentration in an intrinsic
Semiconductors open circuited PN junction – diffusion.


II. PN Junction Diode :
PN Junction Diode, VI Characteristics of PN Junction Diode, capacitate effects in
PN Junction Diode, Quantitative theory of PN Junction Diode.


III. Special Devices:
Principles, Working of zero diode, Tunnel diode, Varactor diode, Schottky diode, SCR and UJT.


IV. Transistors:
The bipolar junction Transistor – Operation of PNP and NPN Transistors – Transistor Circuit configurations- characteristics of a CE configurations – h parameter, low frequency small signal equivalent circuit of a Transistor.


V. Transistor Biasing and thermal stabilization:
Transistor Biasing, stabilization, Different methods of transistor biasing – Fixed bias, Collector feedback bias – self bias – Bias compensation.


VI. Field Effect Transistors:
Junction Field Effect Transistors (JFET) – JFET characteristics, JFET Parameters, Small equivalent circuit – MOSFETS – Depletion and Enhancement MOSFETS.


VII. Rectifying circuits:
Half wave and full wave rectifiers – Bridge rectifiers – rectifier efficiency, Ripple and
regulation – Shunt capacitor filter – Zener regulation.


VIII. Transistor Amplifiers:
CE, CB, CC amplifier configurations – Analysis using h- parameters – Multistage amplifier – RC coupled amplifier – frequency response curve and bandwidth.

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