I want to do BSC Electronics course from Osmania University but I have no idea about its syllabus so please can you give me the syllabus of Osmania University BSC Electronics and tell me from where can I download the syllabus?

Here I am giving complete syllabus of B.SC Electronics Course offered by Osmania University for your reference:

Osmania University B.Sc Electronics Syllabus
DSC- Paper – I : Circuit Analysis
UNIT - I
AC Fundamentals: The sine wave –average and RMS values – The J Operator –Polar and
Rectangular forms of complex numbers – Phasor diagram-Complex impedance and
admittance.
Kirchhoff’s Current and Voltage Laws: Concept of Voltage and current sources-KVL and
KCL- application to simple circuits (AC and DC) consisting of resistors and sources – Node
voltage analysis and Mesh analysis.

UNIT-II
Network Theorems (DC and AC): Superposition Theorem , Thevenin’s Theorem, Norton’s
Theorem, Maximum power transfer Theorem, Reciprocity Theorem, Milliman’s Theorem,
Application to simple Networks.

UNIT-III
RC and RL Circuits : Transient Response of RL and RC Circuits with step input, Time
constants. Frequency response of RC and RL circuits, Types of filters – Low pass filter and
High pass filter- frequency response, passive differentiating circuit and passive integrating
circuit.

UNIT-IV
Resonance : RLC Series and parallel resonance circuits –Resonant frequency –Q FactorBandwidth-Selectivity.
Cathode Ray Oscilloscope: Cathode Ray Tube (CRT) and its working, electron gun focusing,
deflection sensitivity, florescent screen. Measurement of Time period, Frequency , Phase and
amplitude.

DSC- Paper –II : Electronic Devices
UNIT- I
PN Junction: Formation of PN junction, Depletion region, Junction capacitance, Diode
equation (no derivation) Effect of temperature on reverse saturation current , V - I
characteristics and simple applications of i) Junction diode, ii) Zener diode, iii) Tunnel diode
and iv) Varactor diode.

UNIT-II
Bipolar Junction Transistor( BJT) : PNP and NPN transistors, current components in BJT,
BJT static characteristics ( Input and Output ) , Early effect , CB , CC , CE configurations of
transistor and bias conditions ( cut off, active, and saturation regions ), CE configuration as two
port network, h – parameter model and its equivalent circuit. Determination of h –
parameters from the characteristics. Load line analysis ( AC and DC ). Transistor Biasing –
Fixed and self bias.

UNIT- III

Field Effect Transistor ( FET ): Construction and working of JFET, output and transfer
characteristics of FET, Determination of FET parameters. Application of FET as Voltage
variable resistor. Advantages of FET over BJT. MOSFET :: construction and working of
enhancement and depletion modes , output and transfer characteristics Application of
MOSFET as a switch .
Uni Junction Transistor (UJT): Construction and working of UJT and its Characteristics.
Application of UJT as a relaxation oscillator.

UNIT- IV
Silicon Controlled Rectifier (SCR): Construction and working of SCR. Two transistor
representation, Characteristics of SCR. Application of SCR for power control.
Photo electronic Devices: Construction and Characteristics of Light Dependent Resistor
(LDR), Photo voltaic Cell, Photo diode, Photo transistor and Light Emitting Diode(LED).

Attached Files

Osmania University B.SC Electronics Syllabus .pdf (56.9 KB, 141 views)