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February 2nd, 2016, 12:58 PM
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Join Date: Mar 2012
Re: VLSI Anna University Question Bank

The VLSI subject Question Bank for Anna University which would assist me in preparation is as given below:

1. Draw The Iv Characteristics Of Mos Transistor.

2. Brief The Different Operating Regions Of Mos System.

3. Draw The Equivalent Circuit Structure Of Level 1 Mosfet Model
In Spice.

4. Brief About The Variation Of Fringing Field Factor With The Interconnect Geometry.

5. Compare Cmos Combinational Logic Gates With Reference To The
Equivalent N-Mos Depletion Load Logic With Reference To The
Area Requirement.

6. What Are The Advantage Of Using A Pseudo N-Mos Gate Instead
Of A Full Cmos Gate

7. What Are The Factors That Cause Timing Failures?

8. What Are The Advantage Of A Single Stuck At Fault?

9. With Component Instantitation, Write A Vhdl Program For A
Buffer.

10. Write A Note On Transport Delay
Part-B (10 X 2 = 20)

11. (A) Discuss In Detail About:
(1) Full-Custom Mask Layout Design (8)
(2) Cmos Inverter Layout Design (8)
[Or]
(B) (I) With A Neat Diagram Discuss In Detail About Dc Transfer
Characteristics Of Cmos. (8)
(Ii) Write A Short Notes On The Following Along With The Mask
View
(I) Oxide Related Capacitance (4)
(Ii) Junction Capacitance (4)

12. (A) (I) Obtain An Expression For Level 2 Model Equation Of Mosfet
In Spice. (8)
(Ii) Discuss In Detail About:
(1) Variation Of Mobility With Electric Field.
(2) Variation Of Channel Length In Saturation Modes.
(3) Saturation Of Carrier Velocity. (8)


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